Evidence for ballistic electron transport exceeding 160 μm in an undopedGaAs/AlxGa1−xAsfield-effect transistor
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.4622/fulltext
Reference24 articles.
1. Extremely high-mobility two dimensional electron gas: Evaluation of scattering mechanisms
2. Electron mobilities exceeding 107cm2/V s in modulation‐doped GaAs
3. Coherent electron focusing with quantum point contacts in a two-dimensional electron gas
4. Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperatures
5. Ballistic electron transport beyond 100 microm IN 2D electron systems
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3. Ring-shaped spatial pattern of exciton luminescence formed due to the hot carrier transport in a locally photoexcited electron-hole bilayer;Journal of Experimental and Theoretical Physics;2012-06
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