Many-bodyGWcalculation of the oxygen vacancy in ZnO
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.113201/fulltext
Reference27 articles.
1. AsGaantisite defect in GaAs
2. Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs
3. Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
4. Native point defects in ZnO
5. First-principles calculation of the O vacancy in ZnO: A self-consistent gap-corrected approach
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