Electrical properties of amorphous Ge alloys and electron tunneling in amorphous semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.9.2544/fulltext
Reference21 articles.
1. Localized and nonlocalized impurity states in amorphous germanium
2. TUNNELING INTO AMORPHOUS GERMANIUM FILMS
3. ELECTRON TUNNELING INTO AMORPHOUS GERMANIUM
4. Electron tunnelling into amorphous germanium and silicon
5. Electron tunneling into amorphous silicon
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2. Microscopy and Electrical Properties of Ge/Ge Interfaces Bonded by Surface-Activated Wafer Bonding Technology;Japanese Journal of Applied Physics;2011-01-20
3. Microscopy and Electrical Properties of Ge/Ge Interfaces Bonded by Surface-Activated Wafer Bonding Technology;Japanese Journal of Applied Physics;2011-01-01
4. Metal-semiconductor amorphous and nanoscale Ge-phase composites produced by rapid solidification and by devitrification of an amorphous matrix;Journal of Electronic Materials;2006-11
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