Anisotropic strain in SmSe and SmTe: Implications for electronic transport-Reference-Cited by-同舟云学术

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Anisotropic strain in SmSe and SmTe: Implications for electronic transport

Published:2014-12-15 Issue:24 Volume:90 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kuroda Marcelo A.,Jiang Zhengping,Povolotskyi Michael,Klimeck Gerhard,Newns Dennis M.,Martyna Glenn J.

Funder

Defense Advanced Research Projects Agency

U.S. Department of Defense

International Business Machines Corporation

National Science Foundation

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.90.245124/fulltext

Reference43 articles.

1. It’s Time to Reinvent the Transistor!

2. High Response Piezoelectric and Piezoresistive Materials for Fast, Low Voltage Switching: Simulation and Theory of Transduction Physics at the Nanometer-Scale

3. Review: Semiconductor Piezoresistance for Microsystems

4. Large-scale production of carbon-coated copper nanoparticles for sensor applications

5. A flexible and highly sensitive strain-gauge sensor using reversible interlocking of nanofibres

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1. Nonvolatile Isomorphic Valence Transition in SmTe Films;ACS Nano;2024-01-16

2. Features of phase equilibria and properties of phases in the Sb-Sm-Se system;Journal of Solid State Chemistry;2022-12

3. Tight-Binding Models, Their Applications to Device Modeling, and Deployment to a Global Community;Springer Handbook of Semiconductor Devices;2022-11-11

4. Features of Phase Equilibria and Properties of Phases in the Sb-Sm-Se System;SSRN Electronic Journal;2022

5. Ab-initio investigation of structural, electronic, magnetic and thermodynamic properties of ErX (X = N, P, As and Sb) compounds;Computational Condensed Matter;2021-06

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