Nucleation of a two-dimensional compound during epitaxial growth ofCoSi2on Si(111)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.30.6227/fulltext
Reference11 articles.
1. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
2. Double heteroepitaxy in the Si (111)/CoSi2/Si structure
3. Cobalt disilicide epitaxial growth on the silicon (111) surface
4. Formation and structure of epitaxial NiSi2 and CoSi2
5. Bonding and structure of CoSi2and NiSi2
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2. Surface modification for epitaxial growth of single crystalline cobalt thin films with uniaxial magnetic anisotropy on GaN(0001)-1×1 surfaces;New Journal of Physics;2010-07-05
3. Reactive interface formation and Co-induced(7×7)superstructure on a GaN(0001) pseudo-(1×1)substrate surface;Physical Review B;2010-06-03
4. First-principles study of cobalt silicide nanosheet and nanotubes: Stability and electronic properties;Physica E: Low-dimensional Systems and Nanostructures;2009-10
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