Hubbard model for disordered systems: Application to the specific heat of the phosphorus-doped silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.23.4035/fulltext
Reference24 articles.
1. Specific-heat studies of heavily doped Si:P
2. Electron correlations in narrow energy bands
3. Absence of Diffusion in Certain Random Lattices
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