Strain distribution and optical phonons in InAs/InP self-assembled quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.16013/fulltext
Reference35 articles.
1. Strained state of Ge(Si) islands on Si: Finite element calculations and comparison to convergent beam electron‐diffraction measurements
2. InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
3. Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy
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