Pressure-induced phase transition and band-gap collapse in the wide-band-gap semiconductorInTaO4-Reference-Cited by-同舟云学术

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Pressure-induced phase transition and band-gap collapse in the wide-band-gap semiconductorInTaO4

Published:2016-01-22 Issue:3 Volume:93 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Errandonea D.,Popescu C.,Garg A. B.,Botella P.,Martinez-García D.,Pellicer-Porres J.,Rodríguez-Hernández P.,Muñoz A.,Cuenca-Gotor V.,Sans J. A.

Funder

Ministerio de Economía y Competitividad

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.93.035204/fulltext

Reference61 articles.

1. Domain dynamics in the multiferroic phase ofMnWO4

2. Kinetics of the multiferroic switching inMnWO4

3. Pressure effects on the electronic and optical properties ofAWO4wolframites (A =Cd, Mg, Mn, and Zn): The distinctive behavior of multiferroic MnWO4

4. Anomalous High-Pressure Jahn-Teller Behavior inCuWO4

5. Phase transitions in wolframite-typeCdWO4at high pressure studied by Raman spectroscopy and density-functional theory

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