Millimeter-Wave Determination of Photoinjected Free-Carrier Concentrations in Highly Excited GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.8.620/fulltext
Reference12 articles.
1. Optical Gain in Lightly Doped GaAs
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1. Acoustic phonons in InSb probed by time-resolved X-ray diffraction;physica status solidi (b);2006-10
2. Impurity and Defect Levels (Experimental) in Gallium Arsenide;Advances in Electronics and Electron Physics Volume 61;1983
3. Comment on "Coulomb interaction in semiconductor lasers"—A reply;Physical Review B;1974-10-15
4. Carrier concentration and diffusion length measurements by 8‐mm‐microwave magnetophotoreflectivity in germanium and silicon;Journal of Applied Physics;1974-08
5. Time decay of optically injected free carriers in highly excited GaAs;Solid State Communications;1974-07
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