Subpicosecond photoconductivity ofIn0.53Ga0.47As: Intervalley scattering rates observed via THz spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.5568/fulltext
Reference18 articles.
1. Initial thermalization of photoexcited carriers in GaAs studied by femtosecond luminescence spectroscopy
2. Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopy
3. Hot-Electron Recombination at Neutral Acceptors in GaAs: A cw Probe of Femtosecond Intervalley Scattering
4. Identifying the Distinct Phases of Carrier Transport in Semiconductors with 10 fs Resolution
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