High-resolution core-level study of 6H-SiC(0001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.13793/fulltext
Reference30 articles.
1. A 4.5 kV 6H silicon carbide rectifier
2. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
3. LEED and Auger electron observations of the SiC(0001) surface
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