Nucleation and growth of Si/Si(111) observed by scanning tunneling microscopy during epitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.7709/fulltext
Reference13 articles.
1. Intensity oscillations of reflection high‐energy electron diffraction during silicon molecular beam epitaxial growth
2. Observation of Si(111) surface topography changes during Si molecular beam epitaxial growth using microprobe reflection high‐energy electron diffraction
3. Nucleation and growth during molecular beam epitaxy (MBE) of Si on Si(111)
4. Homoepitaxy of Si(111) is surface defect mediated
5. Scanning tunneling microscopy study of low‐temperature epitaxial growth of silicon on Si(111)‐(7×7)
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