Origin of the significantly enhanced optical transitions in layered boron nitride-Reference-Cited by-同舟云学术

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Origin of the significantly enhanced optical transitions in layered boron nitride

Published:2012-10-01 Issue:15 Volume:86 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Huang Bing,Cao X. K.,Jiang H. X.,Lin J. Y.,Wei Su-Huai

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.86.155202/fulltext

Reference32 articles.

1. Electronic Structure and Optical Properties of Semiconductors

2. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal

3. Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure

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1. A hybrid density functional study of tensile-induced changes in phonon dispersion, electronic structure and optical absorption of bilayer BN for optoelectronic applications;Results in Physics;2024-04

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3. Reduction of NO_x on metal-free hydrogenated hexagonal boron nitride;Catalysis Science & Technology;2024

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