Origin of the large positive magnetoresistance of Ge1−xMnx granular thin films-Reference-Cited by-同舟云学术

Origin of the large positive magnetoresistance of Ge1−xMnx granular thin films

Published:2017-01-17 Issue:1 Volume:95 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Wakabayashi Yuki K.,Akiyama Ryota,Takeda Yukiharu,Horio Masafumi,Shibata Goro,Sakamoto Shoya,Ban Yoshisuke,Saitoh Yuji,Yamagami Hiroshi,Fujimori Atsushi,Tanaka Masaaki,Ohya Shinobu

Funder

Ministry of Education, Culture, Sports, Science and Technology

Research Institute of Electrical Communication, Tohoku University

Tohoku University

Japan Atomic Energy Agency

Japan Society for the Promotion of Science

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.014417/fulltext

Reference29 articles.

1. A Group-IV Ferromagnetic Semiconductor: Mn x Ge 1− x

2. Ferromagnetic percolation in MnxGe1−x dilute magnetic semiconductor

3. Magnetism inMnxGe1−xsemiconductors mediated by impurity band carriers

4. High-Curie-temperature ferromagnetism in self-organized Ge1−xMnx nanocolumns

5. Spinodal decomposition to control magnetotransport in (Ge,Mn) films

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