Dynamic observation of Si crystal growth on a Si(111)7×7 surface by high-temperature scanning tunneling microscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.1943/fulltext
Reference10 articles.
1. Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy
2. Intensity oscillations of reflection high‐energy electron diffraction during silicon molecular beam epitaxial growth
3. UHV-REM study of homoepitaxial growth of Si
4. Direct observation of monoatomic step behaviour in MBE on Si by reflection electron microscopy
5. Observation of Si(111) surface topography changes during Si molecular beam epitaxial growth using microprobe reflection high‐energy electron diffraction
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1. Intermediate Structures in the Lifting of a Stacking Fault on the Si(111)–(7 × 7) Surface Studied by Monte Carlo Simulations;Journal of the Physical Society of Japan;2018-03-15
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