Prediction of the effect of the sample biasing in scanning tunneling microscopy and of surface defects on the observed character of the dimers in the Si(001)-(2×1) surface-Reference-Cited by-同舟云学术

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Prediction of the effect of the sample biasing in scanning tunneling microscopy and of surface defects on the observed character of the dimers in the Si(001)-(2×1) surface

Published:1991-01-15 Issue:3 Volume:43 Page:2058-2062
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Badziag Piotr,Verwoerd Wynand S.,Van Hove Michel A.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.2058/fulltext

Reference39 articles.

1. Structural and electronic model of negative electron affinity on the Si/Cs/O surface

2. Surfaces of silicon

3. Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon

4. An electron diffraction study of the structure of silicon (100)

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electric-field effects on the diffusion of Si and Ge adatoms on Si(001) studied by density functional simulations;Physical Review B;2009-06-24

2. PERTURBATION METHODS IN SCANNING TUNNELING MICROSCOPY;Properties of Single Organic Molecules on Crystal Surfaces;2006-05

3. Topographic images;Scanning Probe Microscopy;2006

4. Structural Stability of Si(001) and Ge(001) in External Electric Fields;Japanese Journal of Applied Physics;2005-07-26

5. Energy barrier for dimer flipping at theSi(001)−(2×1)surface in external electric fields;Physical Review B;2005-03-15

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