Fermi enhancement and breakdown of the parity selection rule in the luminescence spectra of GaAs/AlxGa1−xAs modulation-doped quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.12433/fulltext
Reference29 articles.
1. Band-gap renormalization in semiconductor quantum wells containing carriers
2. Spectroscopy of a high-mobility GaAs-Ga1−xAlxAs one-side-modulation-doped quantum well
3. Observation of a Many-Body Edge Singularity in Quantum-Well Luminescence Spectra
4. Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structures
5. Carrier Concentration Dependent Absorption Spectra of Modulation Doped n-AlGaAs/GaAs Quantum Wells and Performance Analysis of Optical Modulators and Switches Using Carrier Induced Bleaching (CIB) and Refractive Index Change (CIRIC)
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1. Optical properties of n- and p-type modulation doped GaAsBi/AlGaAs quantum well structures;Journal of Alloys and Compounds;2018-03
2. Use of micro-photoluminescence as a contactless measure of the 2D electron density in a GaAs quantum well;Applied Physics Letters;2017-06-26
3. Many-body effects in wide parabolic AlGaAs quantum wells;Journal of Applied Physics;2007-11
4. Magneto-optical spectroscopy of modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells;Solid State Communications;1999-05
5. Effects of alloy potential fluctuations in InGaN epitaxial films;Semiconductor Science and Technology;1999-01-01
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