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Trion formation in narrow GaAs quantum well structures

Published:2005-04-25 Issue:16 Volume:71 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Teran F. J.,Eaves L.,Mansouri L.,Buhmann H.,Maude D. K.,Potemski M.,Henini M.,Hill G.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.161309/fulltext

Reference21 articles.

1. Mobile and Immobile Effective-Mass-Particle Complexes in Nonmetallic Solids

2. Ground state energy and optical absorption of excitonic trions in two dimensional semiconductors

3. Observation of negatively charged excitonsX−in semiconductor quantum wells

4. Electron-concentration-dependent quantum-well luminescence: Evidence for a negatively charged exciton

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1. Charge transfer energy and band filling effects on two-hole Auger resonances in strongly correlated systems;Physical Review B;2023-10-03

2. Nanoscale Modification of WS2 Trion Emission by Its Local Electromagnetic Environment;Nano Letters;2021-12-08

3. Experimental Detection and Control of Trions and Fermi-Edge Singularity in Single-Barrier GaAs/AlAs/GaAs Heterostructures Using Photocapacitance Spectroscopy;Physical Review Applied;2018-10-17

4. Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices;Journal of Electronic Materials;2017-03-02

5. Spin polarization of carriers in resonant tunneling devices containing InAs self-assembled quantum dots;Superlattices and Microstructures;2015-12

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