Use of the channeling technique and calculated angular distributions to locate Br implanted into Fe single crystals
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.9.3022/fulltext
Reference37 articles.
1. The interaction of channeled ions with foreign atoms in crystals
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3. The use of channeling-effect techniques to locate interstitial foreign atoms in silicon
4. On the spatial distribution of channelled ions
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