ResonantΓ−X−Γmagnetotunneling in GaAs-AlAs-GaAs heterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.R5251/fulltext
Reference15 articles.
1. Resonant tunneling through single layer heterostructures
2. Fine structure of electron-transmission spectra across AlAs single barriers
3. Resonant tunneling viaX‐point states in AlAs‐GaAs‐AlAs heterostructures
4. Resonant magnetotunneling in GaAlAs-GaAs-GaAlAs heterostructures
5. Resonant tunneling in magnetic field: Evidence for space-charge buildup
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1. Spin-Resolved Resonant Tunneling in a III-V Semiconductor Double-Barrier Structure;Journal of the Korean Physical Society;2008-12-15
2. AlAs: camel’s back parameter;New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds;2008
3. Spin splitting of X-valley-related donor impurity states in an AlAs barrier;Physical Review B;2005-05-23
4. Spin Splitting of the X-valley Donor Impurity States in AlAs Barriers and the Spatial Distribution of the Probability Density of Their Wave Functions;Semiconductors;2005
5. Resonant Γ-X tunneling in single-barrier GaAs/AlAs/GaAs heterostructures;Semiconductors;2004-04
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