Hysteresis in the magnetotransport of manganese-doped germanium: Evidence for carrier-mediated ferromagnetism-Reference-Cited by-同舟云学术

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Hysteresis in the magnetotransport of manganese-doped germanium: Evidence for carrier-mediated ferromagnetism

Published:2010-04-22 Issue:16 Volume:81 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Zhou Shengqiang,Bürger Danilo,Mücklich Arndt,Baumgart Christine,Skorupa Wolfgang,Timm Carsten,Oesterlin Peter,Helm Manfred,Schmidt Heidemarie

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.165204/fulltext

Reference35 articles.

1. Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductors

2. Carrier-induced ferromagnetism inp−Zn1−xMnxTe

3. A Group-IV Ferromagnetic Semiconductor: Mn x Ge 1− x

4. High-Curie-temperature ferromagnetism in self-organized Ge1−xMnx nanocolumns

5. Clustering in a Precipitate-Free GeMn Magnetic Semiconductor

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2. Room temperature ferromagnetism in Fe-doped semiconductor ZrS2single crystals;Materials Research Express;2018-04-27

3. Activation of acceptor levels in Mn implanted Si by pulsed laser annealing;Journal of Physics D: Applied Physics;2018-03-29

4. Room temperature ferromagnetism in low dose ion implanted counter-doped Ge:Mn, As;Physica B: Condensed Matter;2017-10

5. Defects engineering induced room temperature ferromagnetism in transition metal doped MoS 2;Materials & Design;2017-05

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