Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems-Reference-Cited by-同舟云学术

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Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems

Published:2009-10-07 Issue:15 Volume:80 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Saint-Girons G.,Cheng J.,Regreny P.,Largeau L.,Patriarche G.,Hollinger G.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.155308/fulltext

Reference35 articles.

1. Domain epitaxy: A unified paradigm for thin film growth

2. Room‐temperature continuous operation ofp‐nAlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

3. Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates

4. Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

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