Character of states near the Fermi level in (Ga,Mn)As: Impurity to valence band crossover-Reference-Cited by-同舟云学术

Character of states near the Fermi level in (Ga,Mn)As: Impurity to valence band crossover

Published:2007-09-18 Issue:12 Volume:76 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Jungwirth T.,Sinova Jairo,MacDonald A. H.,Gallagher B. L.,Novák V.,Edmonds K. W.,Rushforth A. W.,Campion R. P.,Foxon C. T.,Eaves L.,Olejník E.,Mašek J.,Yang S.-R. Eric,Wunderlich J.,Gould C.,Molenkamp L. W.,Dietl T.,Ohno H.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.76.125206/fulltext

Reference48 articles.

1. Photoexcitation and Photoionization of Neutral Manganese Acceptors in Gallium Arsenide

2. Thermal activation energy of manganese acceptors in gallium arsenide as a function of impurity spacing

3. Model for the Mn acceptor in GaAs

4. Spatial Structure of an Individual Mn Acceptor in GaAs

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