Space-charge layer, metallization, and collective excitations of the Bi/GaAs(110) interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.8198/fulltext
Reference27 articles.
1. LEED-AES-TDS characterization of Sb overlayers on GaAs(110)
2. Electronic structure of Sb overlayers on GaAs(110)
3. Sb overlayers on GaAs(110)
4. Characterization of UHV prepared Sb overlayers on (110) surfaces of III–V semiconductors
5. Direct observation by reflection high‐energy electron diffraction of amorphous‐to‐crystalline transition in the growth of Sb on GaAs(110)
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