High-resolution core-level study of the (100), (110), and (111) surfaces ofCr3Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.1535/fulltext
Reference30 articles.
1. Electronic properties on silicon-transition metal interface compounds
2. Formation of CrSi andCrSi2upon annealing of Cr overlayers on Si(111)
3. Structural morphology and electronic properties of the Si-Cr interface
4. CrSi2 formation and reduction of Cr2O3, during annealing of an oxidized Cr overlayer on Si(111)
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1. Study of the early stages of Cr/6H-SiC(0001) interface formation;Applied Surface Science;2006-05
2. Specific features of electron structures of some thin film d-silicides;Journal of Electron Spectroscopy and Related Phenomena;1998-11
3. STATUS AND PERSPECTIVES OF DOUBLE BETA DECAY — WINDOW TO NEW PHYSICS BEYOND THE STANDARD MODEL OF PARTICLE PHYSICS;International Journal of Modern Physics A;1998-09-20
4. Morphology and atomic structure of the sputtered and annealedMo3Si andCr3Si (110) surfaces;Physical Review B;1994-12-15
5. Double-beta decay in pn-QRPA model with isospin and SU(4) symmetry constraints;Nuclear Physics A;1994-05
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