Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe2(0001) interfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.14242/fulltext
Reference48 articles.
1. Systematics of chemical structure and schottky barriers at compound semiconductor-metal interfaces
2. Surface States and Rectification at a Metal Semi-Conductor Contact
3. Mechanisms of Schottky-barrier formation in metal–semiconductor contacts
4. The advanced unified defect model for Schottky barrier formation
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