Intersubband optical response of semiconductor quantum wells dressed by strong infrared fields
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.13349/fulltext
Reference23 articles.
1. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
2. Photovoltaic GaAs quantum well infrared detectors at 4.2 μm using indirect AlxGa1−xbarriers
3. Extended long‐wavelength λ=11–15‐μm GaAs/AlxGa1−xAs quantum‐well infrared photodetectors
4. Photoinduced intersubband absorption in undoped multi-quantum-well structures
5. Measurement of the intersubband scattering rate in semiconductor quantum wells by excited state differential absorption spectroscopy
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2. The effects of the intense laser and magnetic fields on the group velocity of light in GaAs/Al0.3Ga0.7As near-surface quantum well;Physica E: Low-dimensional Systems and Nanostructures;2016-01
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