Core-level shifts of the Ge(100)-(2×1) surface and their origins
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.13749/fulltext
Reference23 articles.
1. Geometry-DependentSi(2p)Surface Core-Level Excitations for Si(111) and Si(100) Surfaces
2. Possibility of charge transfer between dimer atoms on Si(100)-(2×1)
3. Crystal-field splitting and charge flow in the buckled-dimer reconstruction of Si(100)2×1
4. Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2×1)
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