Bound excitons and resonant Raman scattering inCdxZn1−xTe(0.9≤x≤1)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.28.7115/fulltext
Reference35 articles.
1. Nitrogen trap in the semiconductor alloys GaAs1−χxPχx and AlχxGa1−χxAs
2. Compositional fluctuation-induced broadening of bound-exciton lines in II–VI semiconductor mixed crystals
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