Exciton-phonon interactions, exciton binding energy, and their importance in the realization of room-temperature semiconductor lasers based on GaN
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.16333/fulltext
Reference38 articles.
1. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
2. Femtosecond four-wave-mixing studies of nearly homogeneously broadened excitons in GaN
3. Temperature-dependent absorption measurements of excitons in GaN epilayers
4. Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
5. Exciton region reflectance of homoepitaxial GaN layers
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