Surface chemical bonding of selenium-treated GaAs(111)A, (100), and (111)B
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.10201/fulltext
Reference18 articles.
1. Enhanced electronic properties of GaAs surfaces chemically passivated by selenium reactions
2. Marked Reduction of the Surface/Interface States of GaAs by (NH4)2SxTreatment
3. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
4. Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAs
5. Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs
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