Termination effects at metal/ceramic junctions: Schottky barrier heights and interface properties of the β-SiC(001)/Ni systems
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.235312/fulltext
Reference22 articles.
1. High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination
2. Energetics and bonding properties of the Ni /β-SiC (001) interface: Anabinitiostudy
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