Strong magnetoresistance modulation by Ir insertion in a Ta/Ir/CoFeB trilayer
Author:
Funder
Beijing Innovation Center for Future Chip
National Natural Science Foundation of China
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.100.144425/fulltext
Reference42 articles.
1. Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect
2. Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO
3. Current-driven dynamics of chiral ferromagnetic domain walls
4. Interfacial Dzyaloshinskii-Moriya interaction in perpendicularly magnetizedPt/Co/AlOxultrathin films measured by Brillouin light spectroscopy
5. Dzyaloshinskii-Moriya interaction and spin-orbit torque at the Ir/Co interface
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1. Enhanced Spin-Orbit-Torque Efficiency in W−Co20Fe60B20 Multilayers by Insertion of an IrxMn1−x or PtxMn1−x Layer;Physical Review Applied;2024-01-10
2. Elucidating the role of an Ir insertion layer in mediating interfacial perpendicular anisotropy, Dzyaloshinskii-Moriya interaction, and spin-orbit torque in Pt/Ir/Co;Physical Review B;2023-12-06
3. Microstructure and electrical transport properties of nanoscale [(CO40Fe40B20)34(SiO2)66/(In2O3)/C]46 multilayers;The European Physical Journal Applied Physics;2023
4. Enhanced Spin–Orbit Torque and Low Critical Current Density in Pt100–xRux/[CoNi]/Ru Multilayer for Spintronic Devices;ACS Applied Materials & Interfaces;2021-12-14
5. Spin-orbit torques: Materials, mechanisms, performances, and potential applications;Progress in Materials Science;2021-05
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