Stability and electronic structure of the cinnabar phase in GaAs-Reference-Cited by-同舟云学术

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Stability and electronic structure of the cinnabar phase in GaAs

Published:1998-01-15 Issue:4 Volume:57 Page:R2029-R2032
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kelsey A. A.,Ackland G. J.,Clark S. J.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.R2029/fulltext

Reference17 articles.

1. Erratum: Tetrahedral structures and phase transitions in III-V semiconductors [Phys. Rev. B50, 8389 (1994)]

2. Tetrahedral structures and phase transitions in III-V semiconductors

3. New Structural Systematics in the II–VI, III–V, and Group-IV Semiconductors at High Pressure

4. First-principles pseudopotential study of the phase stability of the III-V semiconductors GaAs and AlAs

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1. Stability of the sc16 polymorph of GaAs;Journal of Physics and Chemistry of Solids;2021-12

2. Phase transformation of GaAs at high pressures and temperatures;Journal of Physics and Chemistry of Solids;2018-02

3. Nanograin formation of GaAs by high-pressure torsion;Philosophical Magazine Letters;2013-11-20

4. Cinnabar and SC16 high-pressure phases of ZnSe: Anab initiostudy;Physical Review B;2010-05-27

5. Electronic properties and phase transitions in Si, ZnSe, and GaAs under pressure cycling up to 20-30 GPa in a high-pressure cell;physica status solidi (b);2009-03

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