Analysis of Recombination of Excitons Bound to Deep Neutral Donors and Acceptors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.6.2372/fulltext
Reference17 articles.
1. Experimental Proof of the Existence of a New Electronic Complex in Silicon
2. Bound Excitons in GaP
3. Auger Recombination of Excitons Bound to Neutral Donors in Gallium Phosphide and Silicon
4. Absorption and Luminescence of Excitons at Neutral Donors in Gallium Phosphide
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1. Polarization and gain in mercuric iodide gamma-ray spectrometers;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1992-11
2. Electronic passivation of GaP surfaces using (NH4)2S treatment;Canadian Journal of Physics;1992-10-01
3. Decay of green photoluminescence in GaP:Zn,O;Physical Review B;1992-08-15
4. Optical characterization of deep energy levels in semiconductors;Progress in Crystal Growth and Characterization;1982-01
5. Study of non-linear extrinsic luminescence in GaAs. II. The role of auger recombination;Physica Status Solidi (a);1979-02-16
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