Phonons in Disordered Si-Ge Alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.8.4671/fulltext
Reference14 articles.
1. Extension of a Linear Diatomic-Chain Model for the Calculation of Local-Mode Frequencies in Real Crystals
2. Phonon processes in mixed crystals of CdSx CdSe1-x
3. Raman Scattering by Local Modes in Germanium-Rich Silicon-Germanium Alloys
4. Lattice Parameter and Density in Germanium-Silicon Alloys1
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1. Determination of the composition and stresses in GexSi(1−x) heterostructures from Raman spectroscopy data: Refinement of model parameters;Semiconductors;2006-11
2. Inter-valence-band electronic Raman scattering due to photoexcited holes inGe1−xSix;Physical Review B;2000-07-15
3. Raman scattering in germanium-silicon alloys under hydrostatic pressure;Physical Review B;1993-07-15
4. Phonon Response Theory and the Infrared and Raman experiments;Optical Properties of Mixed Crystals;1988
5. Concentration dependence of the mixed crystal modes of vibration;Pramana;1982-01
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