Filled tetrahedral semiconductorLi3AlN2studied with optical absorption: Application of the interstitial insertion rule
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.70.233303/fulltext
Reference19 articles.
1. Predicted Modifications in the Direct and Indirect Gaps of Tetrahedral Semiconductors
2. Electronic structure of filled tetrahedral semiconductors
3. Electronic structure of LiZnN: Interstitial insertion rule
4. Die ternären Nitride Li3AIN2und Li3GaN2. 17. Mitteilung über Metallamide und Metallnitride
5. Ternary Nitrides, Phosphides, and Arsenides of Lithium
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