Growth of anα-Sn film on an InSb(111)A−(2×2)surface-Reference-Cited by-同舟云学术

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Growth of anα-Sn film on an InSb(111)A−(2×2)surface

Published:2004-12-28 Issue:23 Volume:70 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kondo Daiyu,Sakamoto Kazuyuki,Shima Masahide,Takeyama Wakaba,Nakamura Kenya,Ono Kanta,Kasukabe Yoshitaka,Oshima Masaharu

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.70.233314/fulltext

Reference10 articles.

1. The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxy

2. Angle-resolved photoemission of α-Sn(111) and the polar (111) and () surfaces of InSb

3. Surface phase transition and interface interaction in the α-Sn/InSb{111} system

4. Growth morphology and electronic properties of Sn deposited on different InSb surfaces

5. α-Sn pseudomorphic growth on InSb (111) and () surfaces: a high-resolution photoemission study

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-dimensional growth of conductive ultra-thin Sn films on insulating substrate with an Fe buffer layer;APL Materials;2020-06-01

2. Stabilization of diamond cubic Sn nanodots in Ge;Materials Letters;2017-01

3. Dirac Cone with Helical Spin Polarization in Ultrathinα-Sn(001) Films;Physical Review Letters;2013-11-19

4. Optimization of the ammonium sulfide (NH4)2S passivation process on InSb(111)A;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-07

5. In situ X-ray photoelectron spectroscopy characterization of Al2O3/InSb interface evolution from atomic layer deposition;Applied Surface Science;2012-05

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