Screening effects on the optical properties of II-VI wurtzite ZnO/MgO quantum dots
Author:
Funder
National Research Foundation of Korea
Ministry of Education, Science and Technology
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.97.075301/fulltext
Reference28 articles.
1. Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures
2. Ground state switching in InGaN/GaN quantum dot molecules
3. Self-assembled m -plane InGaN quantum dots: formation and shape evolution
4. Spontaneous emission and optical gain characteristics of blue InGaAlN/InGaN quantum well structures with reduced internal field
5. Growth of ZnO∕MgZnO quantum wells on sapphire substrates and observation of the two-dimensional confinement effect
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1. Influence of indium content and carrier density on spontaneous emission spectra of wurtzite InGaN/GaN quantum wires with screening effects;Solid State Communications;2023-02
2. A transparent photovoltaic device of NiO/MgO quantum dots/TiO2 arrays pn junction with carrier injection of MgO QDs;Journal of Materials Science: Materials in Electronics;2021-11-11
3. Hollow, mesoporous, eutectic Zn1−xMgxO nano-spheres as solid acid–base catalysts for the highly regio-selective O-methylation of 1,2-diphenols;Catalysis Science & Technology;2021
4. Non-Polar Wurtzite (1120) GaN/AlN Quantum Dots for Highly Efficient Opto-Electronic Devices;Electronics;2020-08-05
5. Surface- and Strain-Mediated Reversible Phase Transformation in Quantum-Confined ZnO Nanowires;Physical Review Letters;2019-11-19
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