Analysis of the atomic geometries of the (101¯0) and (112¯0) surfaces of CdSe by low-energy-electron diffraction and low-energy-positron diffraction-Reference-Cited by-同舟云学术

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Analysis of the atomic geometries of the (101¯0) and (112¯0) surfaces of CdSe by low-energy-electron diffraction and low-energy-positron diffraction

Published:1992-09-15 Issue:11 Volume:46 Page:7011-7026
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Horsky T. N.,Brandes G. R.,Canter K. F.,Duke C. B.,Paton A.,Lessor D. L.,Kahn A.,Horng S. F.,Stevens K.,Stiles K.,Mills A. P.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.7011/fulltext

Reference63 articles.

1. Atomic and electronic structure of tetrahedrally coordinated compound semiconductor interfaces

2. Semiconductor surface structures

3. Mechanism and consequences of surface reconstruction on the cleavage faces of wurtzite‐structure compound semiconductors

4. Surface structure determination of the cleavage faces of CdSe via low‐energy positron diffraction

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5. Investigation of the bulk and surface properties of CdSe: insights from theory;Phys. Chem. Chem. Phys.;2014-09-17

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