Theory of reflectance-difference spectroscopy in ordered III-V semiconductor alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.14110/fulltext
Reference15 articles.
1. Dependence of the optical properties of semiconductor alloys on the degree of long‐range order
2. Band gaps and spin-orbit splitting of ordered and disorderedAlxGa1−xAsandGaAsxSb1−xalloys
3. Electroreflectance of ordered Ga0.5In0.5P Alloys
4. Electroreflectance polarization study of valence‐band states in ordered Ga0.5In0.5P
5. Valence-band splitting in orderedGa0.5In0.5P studied by temperature-dependent photoluminescence polarization
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1. Surface structure of InGaAs/InP(0 0 1) ordered alloy during and after growth;Applied Surface Science;2004-10
2. Effects of Ordering on Physical Properties of Semiconductor Alloys;Spontaneous Ordering in Semiconductor Alloys;2002
3. The Physics of Tunable Disorder in Semiconductor Alloys;Spontaneous Ordering in Semiconductor Alloys;2002
4. Near-band-gap CuPt-order-induced birefringence inAl0.48Ga0.52InP2;Physical Review B;1999-12-15
5. Fingerprints of CuPt ordering in III-V semiconductor alloys: Valence-band splittings, band-gap reduction, and x-ray structure factors;Physical Review B;1998-04-15
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