Optical dielectric function and infrared absorption of hydrogenated amorphous silicon nitride films: Experimental results and effective-medium-approximation analysis-Reference-Cited by-同舟云学术

Optical dielectric function and infrared absorption of hydrogenated amorphous silicon nitride films: Experimental results and effective-medium-approximation analysis

Published:1990-08-15 Issue:6 Volume:42 Page:3666-3675
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Yin Z.,Smith F. W.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.3666/fulltext

Reference38 articles.

1. The preparation, characterization and applications of silicon nitride thin films

2. The characteristics and properties of optimised amorphous silicon field effect transistors

3. Chemically Bound Hydrogen in CVD Si3 N 4: Dependence on NH 3 / SiH4 Ratio and on Annealing

4. Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition

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