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Elastic strain relaxation in axialSi∕Gewhisker heterostructures

Published:2007-04-23 Issue:16 Volume:75 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Hanke M.,Eisenschmidt C.,Werner P.,Zakharov N. D.,Syrowatka F.,Heyroth F.,Schäfer P.,Konovalov O.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.75.161303/fulltext

Reference13 articles.

1. Epitaxially grown GaP/GaAs1−xPx/GaP double heterostructure nanowires for optical applications

2. Semiconductor Nanowires: From Self-Organization to Patterned Growth

3. Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms

4. Silicon nanowhiskers grown on a hydrogen-terminated silicon {111} surface

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