Domain-boundary-induced metastable reconstructions during epitaxial growth of Si/Si(111)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.13238/fulltext
Reference20 articles.
1. The initial stages of growth of silicon on Si(111) by slow positron annihilation low-energy electron diffraction
2. Scanning tunneling microscopy study of low‐temperature epitaxial growth of silicon on Si(111)‐(7×7)
3. Scanning-tunneling-microscope observation of 2×1 structure on a homoepitaxially grown Si(111) surface
4. High atom density in the ‘‘1×1’’ phase and origin of the metastable reconstructions on Si(111)
5. Scanning Tunneling Microscopy of Clean Silicon Surfaces at Elevated Temperatures
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5. Structure, shape, and orientation of an island adsorbed on a single-crystal surface in the case of lattice mismatch;Russian Microelectronics;2006-09
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