Highly stable two-dimensional silicon phosphides: Different stoichiometries and exotic electronic properties-Reference-Cited by-同舟云学术

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Highly stable two-dimensional silicon phosphides: Different stoichiometries and exotic electronic properties

Published:2015-03-03 Issue:12 Volume:91 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Huang Bing,Zhuang Houlong L.,Yoon Mina,Sumpter Bobby G.,Wei Su-Huai

Funder

Oak Ridge National Laboratory

Basic Energy Sciences

U.S. Department of Energy

Office of Science

National Renewable Energy Laboratory, Office of Energy Efficiency and Renewable Energy

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.91.121401/fulltext

Reference32 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Spin and pseudospins in layered transition metal dichalcogenides

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Phosphorus Compounds

5. Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon

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