Microscopic mechanisms governing exciton-decay kinetics in type-II GaAs/AlAs superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.2682/fulltext
Reference20 articles.
1. Optical properties and band structure of short-period GaAs/AlAs superlattices
2. Carrier dynamics and recombination mechanisms in staggered-alignment heterostructures
3. Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Γ-X mixing
4. Γ-Xz mixing in GaAs/AlAs superlattices of type II
5. Γ-Xmixing in GaAs/AlxGa1−xAs andAlxGa1−xAs/AlAs superlattices
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1. Intrinsic and magnetic-field-induced linear polarization of excitons in ultrathin indirect-gap type-II GaAs/AlAs quantum wells;Physical Review B;2019-04-05
2. Exciton Recombination and Spin Dynamics in Indirect-Gap Quantum Wells and Quantum Dots;Physics of the Solid State;2018-08
3. Spin dynamics and magnetic field induced polarization of excitons in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment;Physical Review B;2017-07-10
4. Dynamics of exciton recombination in strong magnetic fields in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment;Physical Review B;2016-07-08
5. Thermal dissociation of excitons in a type-I GaAs/AlAs superlattice studied by time-resolved photoluminescence measurements;Physica E: Low-dimensional Systems and Nanostructures;2000-05
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