Quantum oscillations in strained-layer superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.28.2229/fulltext
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4. Quantum oscillations at a Ga0.47In0.53AsInP heterojunction interface
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1. Effective masses and g factors for 2D light holes in InSb;Semiconductor Science and Technology;1990-03-01
2. Energy relaxation of light holes in InAs.15Sb.85/InSb multiple quantum wells;Solid-State Electronics;1989-12
3. Binding energy of shallow acceptors inInxGa1−xAsGaAsstrained quantum wells;Physical Review B;1988-10-15
4. Extrinsic Photoluminescence in Unintentionally and Magnesium Doped GaInAs/GaAs Strained Quantum Wells;Properties of Impurity States in Superlattice Semiconductors;1988
5. The preparation of modulation-doped GaAs/GaAs1-xPx strained-layer superlattices by metal organic chemical vapor deposition;Journal of Electronic Materials;1987-09
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