Reactivation kinetics of acceptors in hydrogenated InP during unbiased annealing
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.1536/fulltext
Reference17 articles.
1. Hydrogen in Crystalline Semiconductors
2. Negative-charge state of hydrogen in silicon
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4. Thermal dissociation energy of the Si‐H complex inn‐type GaAs
5. Correlation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces
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1. NONMINIMAL SCALAR–TENSOR THEORIES AND QUANTUM GRAVITY;International Journal of Modern Physics A;2000-05-20
2. BRANS–DICKE AND RELATED EUCLIDEAN WORMHOLES;Modern Physics Letters A;1998-04-20
3. A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching;Journal of Applied Physics;1997-08-15
4. Reactivation kinetics of boron acceptors in hydrogenated silicon during zero bias anneal;Journal of Applied Physics;1997-07
5. Analyzing powers for mirror states in12C(6Li,7Li/7Be)atE6Li=50MeV: Evaluation of channel coupling;Physical Review C;1997-05-01
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