Optical-phonon emission in GaAs/AlAs multiple-quantum-well structures determined by hot-electron luminescence
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.14144/fulltext
Reference27 articles.
1. Hot electron photoluminescence in GaAs crystals
2. Spectrum and polarization of hot-electron photoluminescence in semiconductors
3. Optical alignment of 2D-electron momenta in multiple quantum well structures
4. Hot-Electron Recombination at Neutral Acceptors in GaAs: A cw Probe of Femtosecond Intervalley Scattering
5. Continuous-wave spectroscopy of femtosecond carrier scattering in GaAs
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1. Impurity-related photoluminescence line shape asymmetry in GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach;Journal of Applied Physics;2010-05
2. Quantum kinetic equation for spin relaxation and spin Hall effect in GaAs;The European Physical Journal B;2009-12-24
3. Effect of double heterojunctions on the plasmon–phonon coupling in a GaAs/Al0.24Ga0.76As quantum well;Semiconductor Science and Technology;2008-11-21
4. Impurity-induced Huang–Rhys factor in beryllium δ-doped GaAs/AlAs multiple quantum wells: fractional-dimensional space approach;Semiconductor Science and Technology;2007-08-23
5. Significance of dimensionality and dynamical screening on hot carrier relaxation in bulk GaAs and quantum wells;Solid State Communications;2003-11
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