Doping dependence of chemical potential and entropy in hole- and electron-doped high-Tccuprates
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.092509/fulltext
Reference10 articles.
1. Similarity and dissimilarity in transport properties of electron- and hole-doped high-Tc cuprates
2. Doping Dependence of Pseudogap and Related Charge Dynamics inNd2−xCexCuO4
3. Doping Dependence of ann-Type Cuprate Superconductor Investigated by Angle-Resolved Photoemission Spectroscopy
4. Chemical potential shift inNd2−xCexCuO4: Contrasting behavior between the electron- and hole-doped cuprates
5. Electronic states in the antiferromagnetic phase of electron-doped high-Tccuprates
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